IRLB8743PBF, Trans MOSFET N-CH Si 30V 150A 3-Pin(3+Tab) TO-220AB Tube

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750 ֏

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210 шт. на сумму 157 500 ֏

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Номенклатурный номер: 8003195795

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор: N-MOSFET, полевой, 30В, 150А, 140Вт, TO220AB Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	150 A
Maximum Drain Source Resistance	3 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	2.35V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	140 W
Minimum Gate Threshold Voltage	1.35V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Series	HEXFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	36 nC @ 4.5 V
Width	4.83mm
Current - Continuous Drain (Id) @ 25В°C	78A(Tc)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	5110pF @ 15V
Manufacturer	Infineon Technologies
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	140W(Tc)
Rds On (Max) @ Id, Vgs	3.2mOhm @ 40A, 10V
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.35V @ 100ВµA
Вес, г	277.6