IKW15N120H3FKSA1, Trans IGBT Chip N-CH 1200V 30A 217000mW Automotive 3-Pin(3+Tab) TO-247 Tube

Изображения служат только для ознакомления,
см. техническую документацию

3 960 ֏

Мин. кол-во для заказа 40 шт.

от 117 шт. — 3 830 ֏

от 304 шт. — 3 610 ֏

Добавить в корзину 40 шт. на сумму 158 400 ֏

Альтернативные предложения1

Номенклатурный номер: 8003214063

Semiconductor - Discrete > Power Discrete > Transistor - IGBT Component

Описание Транзистор БТИЗ, 1200В 30A 217Вт TO247 Характеристики

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	2.7 V
Configuration	Single
Continuous Collector Current at 25 C	30 A
Continuous Collector Current Ic Max	15 A
Factory Pack Quantity	240
Gate-Emitter Leakage Current	600 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	IKW15N120H3 IKW15N120H3XK SP000674422
Pd - Power Dissipation	217 W
Product Category	IGBT Transistors
RoHS	Details
Series	XKW15N120
Technology	Si
Automotive	Unknown
Channel Type	N
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Through Hole
Maximum Collector-Emitter Voltage (V)	1200
Maximum Continuous Collector Current (A)	30
Maximum Gate Emitter Leakage Current (uA)	0.6
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	217
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	Unknown
Standard Package Name	TO-247
Supplier Package	TO-247
Tab	Tab
Typical Collector Emitter Saturation Voltage (V)	2.05
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	30 A
Maximum Power Dissipation	217 W
Mounting Type	Through Hole
Package Type	TO-247
Transistor Configuration	Single
Вес, г	1