BC807-25-7-F, Trans GP BJT PNP 45V 0.5A 350mW 3-Pin SOT-23 T/R

Фото 1/3 BC807-25-7-F, Trans GP BJT PNP 45V 0.5A 350mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления,
см. техническую документацию
22 ֏
Мин. кол-во для заказа 9000 шт.
Кратность заказа 3000 шт.
9000 шт. на сумму 198 000 ֏
Номенклатурный номер: 8003292655
Бренд: DIODES INC.

Описание

Semiconductor - Discrete > Transistors > BJT - General Purpose

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 700 mV
Configuration: Single
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 100 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 310 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: BC807
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Emitter Voltage -45 V
Maximum DC Collector Current -500 mA
Maximum Emitter Base Voltage -5 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 310 mW
Minimum DC Current Gain 160
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Type PNP
Вес, г 1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 392 КБ
Datasheet
pdf, 108 КБ