IPB117N20NFDATMA1
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см. техническую документацию
см. техническую документацию
4 400 ֏
от 2 шт. —
3 920 ֏
от 3 шт. —
3 660 ֏
Добавить в корзину 1 шт.
на сумму 4 400 ֏
Описание
Электроэлемент
MOSFET, N-CH, 200V, 84A, TO-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:84A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.0103ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 84 A |
| Maximum Drain Source Resistance | 11.7 mΩ |
| Maximum Drain Source Voltage | 200 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Operating Temperature | +170 °C |
| Maximum Power Dissipation | 300 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | OptiMOS FD |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Width | 9.45mm |
| Drain Source On State Resistance | 0.0103Ом |
| Power Dissipation | 300Вт |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | OptiMOS FD |
| Максимальная Рабочая Температура | 175°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 200В |
| Непрерывный Ток Стока | 84А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 3В |
| Рассеиваемая Мощность | 300Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0103Ом |
| Стиль Корпуса Транзистора | TO-263(D2PAK) |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 70 S |
| Id - Continuous Drain Current: | 84 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB117N20NFD SP001107232 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 87 nC |
| Rds On - Drain-Source Resistance: | 10.3 mOhms |
| Rise Time: | 10 ns |
| Series: | OptiMOS Fast Diode |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.01 |
