IKQ50N120CH3XKSA1, Транзистор IGBT 1200В 100A 652Вт
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см. техническую документацию
см. техническую документацию
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Описание
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Транзистор IGBT 1200В 100A 652Вт
Технические параметры
| Корпус | TO-247 | |
| Channel Type | N | |
| Collector Current (DC) | 100(A) | |
| Configuration | Single | |
| Gate to Emitter Voltage (Max) | ±20(V) | |
| Mounting | Through Hole | |
| Operating Temperature (Max) | 175C | |
| Operating Temperature (Min) | -40C | |
| Operating Temperature Classification | AUTOMOTIVEC | |
| Package Type | TO-247 | |
| Packaging | Rail/Tube | |
| Pin Count | 3+Tab | |
| Rad Hardened | No | |
| Brand: | Infineon Technologies | |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV | |
| Collector-Emitter Saturation Voltage: | 2 V | |
| Configuration: | Single | |
| Continuous Collector Current at 25 C: | 100 A | |
| Continuous Collector Current Ic Max: | 100 A | |
| Factory Pack Quantity: Factory Pack Quantity: | 240 | |
| Gate-Emitter Leakage Current: | 100 nA | |
| Manufacturer: | Infineon | |
| Maximum Gate Emitter Voltage: | -20 V, +20 V | |
| Maximum Operating Temperature: | +175 C | |
| Minimum Operating Temperature: | -40 C | |
| Mounting Style: | Through Hole | |
| Package / Case: | TO-247-3 | |
| Packaging: | Tube | |
| Part # Aliases: | IKQ50N120CH3 SP001272708 | |
| Pd - Power Dissipation: | 652 W | |
| Product Category: | IGBT Transistors | |
| Product Type: | IGBT Transistors | |
| Series: | IGBT HighSpeed 3 | |
| Subcategory: | IGBTs | |
| Technology: | Si | |
| Tradename: | TRENCHSTOP | |
| Вес, г | 8.97 |
Техническая документация
Datasheet
pdf, 1627 КБ
