MMBT2907AT-7-F, Trans GP BJT PNP 60V 0.6A 150mW 3-Pin SOT-523 T/R
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см. техническую документацию
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36 ֏
Мин. кол-во для заказа 6000 шт.
Кратность заказа 3000 шт.
от 21000 шт. —
31 ֏
6000 шт.
на сумму 216 000 ֏
Описание
Semiconductor - Discrete > Transistors > BJT - General Purpose
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Type | PNP |
Product Category | Bipolar Small Signal |
Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
Maximum Collector-Emitter Saturation Voltage (V) | 1.6@50mA@500mA|0.4@15mA@150mA |
Maximum DC Collector Current (A) | 0.6 |
Maximum Collector Cut-Off Current (nA) | 10 |
Minimum DC Current Gain | 100@1mA@10V|100@10mA@10V|50@500mA@10V|100@150mA@10V|75@0.1mA@10V |
Maximum Power Dissipation (mW) | 150 |
Maximum Transition Frequency (MHz) | 200(Min) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | SOT |
Pin Count | 3 |
Supplier Package | SOT-523 |
Military | No |
Mounting | Surface Mount |
Package Height | 0.75 |
Package Length | 1.6 |
Package Width | 0.8 |
PCB changed | 3 |
Lead Shape | Gull-wing |
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -60 V |
Collector- Emitter Voltage VCEO Max | -60 V |
Collector-Emitter Saturation Voltage | -1.6 V |
Continuous Collector Current | -0.6 A |
DC Current Gain HFE Max | 300 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 200 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 0.6 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-523-3 |
Pd - Power Dissipation | 150 mW |
Product Type | BJTs-Bipolar Transistors |
Series | MMBT2907 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 60 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current: | -0.6 A |
DC Current Gain hFE Max: | 300 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 200 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package/Case: | SOT-523-3 |
Pd - Power Dissipation: | 150 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMBT2907 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Maximum Collector Base Voltage | -60 V |
Maximum Collector Emitter Voltage | 60 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Power Dissipation | 150 mW |
Mounting Type | Surface Mount |
Package Type | SOT-523(SC-89) |
Transistor Configuration | Single |
Transistor Type | PNP |
Вес, г | 1 |
Техническая документация
Datasheet
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Datasheet MMBT2907AT-7-F
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