IRFU9014PBF, Trans MOSFET P-CH 60V 5.1A 3-Pin(3+Tab) IPAK

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Номенклатурный номер: 8003311763

Semiconductor - Discrete > Transistors > FET - MOSFET

Описание Транзистор P-MOSFET, полевой, -60В, -3,2А, 25Вт, IPAK Характеристики

Base Product Number	IRFU9 ->
Current - Continuous Drain (Id) @ 25В°C	5.1A (Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 3.1A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Capacitance, Input	270 pF &&64;-25 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Current, Drain	-5.1 A
Dimensions	6.73x2.39x6.22 mm
Gate Charge, Total	12 nC
Height	6.22 mm
Length	6.73 mm
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-251AA
Polarization	P-Channel
Power Dissipation	2.5 W
Resistance, Drain to Source On	0.5 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to+150 °C
Time, Turn-Off Delay	9.6 ns
Time, Turn-On Delay	11 ns
Transconductance, Forward	1.4 S
Typical Gate Charge @ Vgs	Maximum of 12 nC &&64;-10 V
Voltage, Breakdown, Drain to Source	-60 V
Voltage, Diode Forward	-5.5 V
Voltage, Drain to Source	-60 V
Voltage, Forward, Diode	-5.5 V
Voltage, Gate to Source	±20 V
Width	2.39 mm
Вес, г	192