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NX3008NBKS,115, Trans MOSFET N-CH 30V 0.35A Automotive 6-Pin TSSOP T/R

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> 1 млн. шт., срок 8-10 недель

80 ֏

Кратность заказа 3000 шт.

от 12000 шт. — 75 ֏

3000 шт. на сумму 240 000 ֏

Альтернативные предложения4

Номенклатурный номер: 8003318834

Бренд: Nexperia B.V.

Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

Mosfet Array 2 N-Channel (Dual) 30V 350mA 445mW Поверхностный монтаж 6-TSSOP

Технические параметры

Base Product Number	NX3008 ->
Current - Continuous Drain (Id) @ 25В°C	350mA
Drain to Source Voltage (Vdss)	30V
ECCN	EAR99
FET Feature	Logic Level Gate
FET Type	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	0.68nC @ 4.5V
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 15V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	445mW
Rds On (Max) @ Id, Vgs	1.4Ohm @ 350mA, 4.5V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	Automotive, AEC-Q101, TrenchMOSв„ў ->
Supplier Device Package	6-TSSOP
Vgs(th) (Max) @ Id	1.1V @ 250ВµA
Brand	Nexperia
Channel Mode	Enhancement
Configuration	Dual
Factory Pack Quantity	3000
Fall Time	19 ns
Id - Continuous Drain Current	350 mA
Manufacturer	Nexperia
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	2 Channel
Packaging	Cut Tape or Reel
Pd - Power Dissipation	445 mW
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	0.52 nC
Qualification	AEC-Q101
Rds On - Drain-Source Resistance	1.4 Ohms
Rise Time	11 ns
Subcategory	MOSFETs
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	2 N-Channel Trench MOSFET
Typical Turn-Off Delay Time	69 ns
Typical Turn-On Delay Time	15 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	4.5 V
Vgs Th - Gate-Source Threshold Voltage	600 mV
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Resistance	2.8 Ω
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	445 mW
Minimum Gate Threshold Voltage	0.6V
Number of Elements per Chip	2
Package Type	SOT-363
Pin Count	6
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	0.52 nC 4.5 V
Width	1.35mm
Вес, г	1