CSD23202W10, Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Канал P, 12 В, 2,2 A (Ta) 1 Вт (Ta), поверхностный монтаж, 4-DSBGA (1x1)
Технические параметры
| Base Product Number | CSD23202 -> |
| Current - Continuous Drain (Id) @ 25В°C | 2.2A (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 512pF @ 6V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 4-UFBGA, DSBGA |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 500mA, 4.5V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | 4-DSBGA (1x1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 900mV @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 21 ns |
| Forward Transconductance - Min: | 5.6 S |
| Id - Continuous Drain Current: | 2.2 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DSBGA-4 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 3.8 nC |
| Rds On - Drain-Source Resistance: | 92 mOhms |
| Rise Time: | 4 ns |
| Series: | CSD23202W10 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 58 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -6 V, +6 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Вес, г | 1 |
