BC847BVN-7, TRANS NPN/PNP 45V 0.1A SOT563
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см. техническую документацию
см. техническую документацию
58 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
53 ֏
от 500 шт. —
44 ֏
от 3000 шт. —
40 ֏
20 шт.
на сумму 1 160 ֏
Описание
Trans GP BJT NPN/PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R
Технические параметры
| Automotive | No |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum Transition Frequency (MHz) | 300(Typ)NPN|200(Typ)PNP |
| Minimum DC Current Gain | 200 2mA 5V NPN|220 2mA 5V PNP |
| Minimum Operating Temperature (°C) | -65 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| Supplier Temperature Grade | Automotive |
| Type | NPN|PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hfe Min: | 200 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-563-6 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC847B |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Вес, г | 1 |
