ZX5T3ZTA, TRANS PNP 40V 5.5A SOT89-3

Фото 1/3 ZX5T3ZTA, TRANS PNP 40V 5.5A SOT89-3
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530 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт.401 ֏
от 100 шт.313 ֏
2 шт. на сумму 1 060 ֏
Альтернативные предложения1
Номенклатурный номер: 8003385293
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный (BJT) транзистор PNP 40V 5.5A 152MHz 2.1W Surface Mount SOT-89-3

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO -50 V
Collector- Emitter Voltage VCEO Max 40 V
Configuration Single
Continuous Collector Current -5.5 A
DC Collector/Base Gain Hfe Min 200
DC Current Gain HFE Max 200
Emitter- Base Voltage VEBO -7.5 V
Factory Pack Quantity 1000
Gain Bandwidth Product FT 152 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 5.5 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-89-3
Packaging Cut Tape or Reel
Pd - Power Dissipation 3000 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series ZX5T3
Subcategory Transistors
Transistor Polarity PNP
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.75
Type PNP
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 50
Maximum Collector-Emitter Voltage (V) 40
Maximum Emitter Base Voltage (V) 7.5
Maximum Base Emitter Saturation Voltage (V) 1.075@550mA@5.5A|0.9@40mA@2A
Maximum Collector-Emitter Saturation Voltage (V) 0.03@10mA@0.1A|0.165@10mA@1A|0.185@550mA@5.5A|0.06@100mA@1A|0.08@200mA@2A|0.175@175mA@3.5A|0.07@50mA@1A|0.175@40mA@2A
Maximum DC Collector Current (A) 5.5
Minimum DC Current Gain 170@2A@2V|110@5.5A@2V|200@10mA@2V|200@500mA@2V
Maximum Power Dissipation (mW) 3000
Maximum Transition Frequency (MHz) 152(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Automotive Yes
AEC Qualified Number AEC-Q101
Pin Count 4
Supplier Package SOT-89
Standard Package Name SOT
Military No
Mounting Surface Mount
Package Height 1.6(Max)
Package Length 4.6(Max)
Package Width 2.6(Max)
PCB changed 3
Tab Tab
Lead Shape Flat
Base Product Number ZX5T3 ->
Current - Collector (Ic) (Max) 5.5A
Current - Collector Cutoff (Max) 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
ECCN EAR99
Frequency - Transition 152MHz
HTSUS 8541.29.0075
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Power - Max 2.1W
REACH Status REACH Affected
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-89-3
Transistor Type PNP
Vce Saturation (Max) @ Ib, Ic 185mV @ 550mA, 5.5A
Voltage - Collector Emitter Breakdown (Max) 40V
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 162 mV
Configuration: Single
Continuous Collector Current: -5.5 A
DC Collector/Base Gain hFE Min: 200
DC Current Gain hFE Max: 200
Emitter- Base Voltage VEBO: 7.5 V
Factory Pack Quantity: Factory Pack Quantity: 1000
Gain Bandwidth Product fT: 152 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 5.5 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: SOT-89-3
Pd - Power Dissipation: 3 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZX5T3
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 0.052

Техническая документация

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