MMDT4403-7-F, TRANS 2PNP 40V 0.6A SOT363
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см. техническую документацию
см. техническую документацию
49 ֏
Кратность заказа 3000 шт.
3000 шт.
на сумму 147 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 40V 0.6A 200mW 6-Pin SOT-363 T/R
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -40 V |
| Collector- Emitter Voltage VCEO Max | -40 V |
| Collector-Emitter Saturation Voltage | -0.75 V |
| Configuration | Dual |
| Continuous Collector Current | -0.6 A |
| DC Current Gain HFE Max | 300 |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 200 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 200 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | MMDT44 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Base Emitter Saturation Voltage (V) | 0.95 15mA 150mA|1.3 50mA 500mA |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.75 50mA 500mA|0.4 15mA 150mA |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Transition Frequency (MHz) | 200(Min) |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Standard Package Name | SOT-26 |
| Supplier Package | SOT-363 |
| Type | PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 40 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 750 mV |
| Configuration: | Dual |
| Continuous Collector Current: | -600 mA |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 200 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMDT44 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |
