MMBT5401-7-F, TRANS PNP 150V 0.6A SOT23-3
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см. техническую документацию
см. техническую документацию
31 ֏
Кратность заказа 100 шт.
от 500 шт. —
27 ֏
от 1000 шт. —
22 ֏
от 3000 шт. —
18 ֏
100 шт.
на сумму 3 100 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 150V 0.6A 350mW 3-Pin SOT-23 T/R
Технические параметры
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | -160 V |
Collector- Emitter Voltage VCEO Max | -150 V |
Collector-Emitter Saturation Voltage | -0.5 V |
Configuration | Single |
Continuous Collector Current | -0.2 A |
DC Collector/Base Gain Hfe Min | 60 |
DC Current Gain HFE Max | 240 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product FT | 300 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 0.2 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 300 mW |
Product Category | Bipolar Transistors-BJT |
Product Type | BJTs-Bipolar Transistors |
Series | MMBT5401 |
Subcategory | Transistors |
Transistor Polarity | PNP |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 1 1mA 10mA|1 5mA 50mA |
Maximum Collector Base Voltage (V) | 160 |
Maximum Collector Cut-Off Current (nA) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.2 1mA 10mA|0.5 5mA 50mA |
Maximum Collector-Emitter Voltage (V) | 150 |
Maximum DC Collector Current (A) | 0.6 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 350 |
Maximum Transition Frequency (MHz) | 300 |
Minimum DC Current Gain | 50 1mA 5V|60 10mA 5V|50 50mA 5V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Type | PNP |
Maximum Collector Base Voltage | -160 V |
Maximum Collector Emitter Voltage | 150 V |
Maximum Emitter Base Voltage | -5 V |
Maximum Operating Frequency | 300 MHz |
Maximum Power Dissipation | 300 mW |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Type | PNP |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 160 V |
Collector- Emitter Voltage VCEO Max: | 150 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | -200 mA |
DC Collector/Base Gain hfe Min: | 60 |
DC Current Gain hFE Max: | 240 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 600 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 310 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | MMBT5401 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 0.01 |
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