ZXTD4591E6TA, TRANS NPN/PNP 60V 1A SOT23-6
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см. техническую документацию
см. техническую документацию
357 ֏
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от 10 шт. —
286 ֏
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216 ֏
от 500 шт. —
195 ֏
3 шт.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Collector-Emitter Breakdown Voltage | 60V |
| Maximum DC Collector Current | 1A |
| Pd - Power Dissipation | 1.1W |
| Transistor Type | NPN,PNP |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 60 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 150 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.7 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Transistor Configuration | Isolated |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@1A, 100mA;600mV@1A, 100mA |
| DC Current Gain (hFE@Ic,Vce) | 100@500mA, 5V |
| Power Dissipation (Pd) | 1.1W |
| Transition Frequency (fT) | 180MHz;150MHz |
| Вес, г | 1 |
