DZT5401-13, TRANS PNP 150V 0.6A SOT223-3
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
247 ֏
Кратность заказа 10 шт.
от 100 шт. —
203 ֏
от 500 шт. —
159 ֏
от 2500 шт. —
147 ֏
10 шт.
на сумму 2 470 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -160 V |
| Collector- Emitter Voltage VCEO Max | -150 V |
| Collector-Emitter Saturation Voltage | -500 mV |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 50 at-1 mA, -5 V |
| Emitter- Base Voltage VEBO | -5 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product FT | 300 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | -600 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 1000 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | DZT5401 |
| Subcategory | Transistors |
| Transistor Polarity | PNP |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Type | PNP |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 160 |
| Maximum Collector-Emitter Voltage (V) | 150 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Base Emitter Saturation Voltage (V) | 1@5mA@50mA|1@1mA@10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@5mA@50mA|0.2@1mA@10mA |
| Maximum DC Collector Current (A) | 0.6 |
| Minimum DC Current Gain | 50@50mA@5V|60@10mA@5V|50@1mA@5V |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Transition Frequency (MHz) | 300 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Standard Package Name | SOT-223 |
| Supplier Package | SOT-223 |
| Pin Count | 4 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Length | 6.5 |
| Package Width | 3.5 |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Gull-wing |
| Collector Emitter Voltage Max | 150В |
| Continuous Collector Current | 600мА |
| DC Current Gain hFE Min | 50hFE |
| DC Усиление Тока hFE | 50hFE |
| Power Dissipation | 1Вт |
| Квалификация | - |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | DZT Series |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | SOT-223 |
| Частота Перехода ft | 300МГц |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 160 V |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 50 at-1 mA, -5 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | DZT5401 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.11 |
