FMMT624TA, TRANS NPN 125V 1A SOT23-3

Фото 1/4 FMMT624TA, TRANS NPN 125V 1A SOT23-3
Изображения служат только для ознакомления,
см. техническую документацию
194 ֏
Кратность заказа 10 шт.
от 100 шт.159 ֏
от 500 шт.124 ֏
от 3000 шт.98 ֏
10 шт. на сумму 1 940 ֏
Номенклатурный номер: 8003474997
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный транзистор, NPN, 125 В, 1 А

Технические параметры

Collector-Emitter Breakdown Voltage 125V
Maximum DC Collector Current 1A
Pd - Power Dissipation 625mW
Transistor Type NPN
Maximum Collector Base Voltage 125 V
Maximum Collector Emitter Voltage 125 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 155 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 625 mW
Minimum DC Current Gain 300
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 125 V
Collector- Emitter Voltage VCEO Max: 125 V
Collector-Emitter Saturation Voltage: 165 mV
Configuration: Single
Continuous Collector Current: 1 A
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 155 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 625 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: FMMT62
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 287 КБ
Datasheet FMMT624TA
pdf, 210 КБ