FMMT624TA, TRANS NPN 125V 1A SOT23-3
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194 ֏
Кратность заказа 10 шт.
от 100 шт. —
159 ֏
от 500 шт. —
124 ֏
от 3000 шт. —
98 ֏
10 шт.
на сумму 1 940 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Биполярный транзистор, NPN, 125 В, 1 А
Технические параметры
Collector-Emitter Breakdown Voltage | 125V |
Maximum DC Collector Current | 1A |
Pd - Power Dissipation | 625mW |
Transistor Type | NPN |
Maximum Collector Base Voltage | 125 V |
Maximum Collector Emitter Voltage | 125 V |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 155 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 625 mW |
Minimum DC Current Gain | 300 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 125 V |
Collector- Emitter Voltage VCEO Max: | 125 V |
Collector-Emitter Saturation Voltage: | 165 mV |
Configuration: | Single |
Continuous Collector Current: | 1 A |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 155 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 625 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | FMMT62 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 1 |