FMMT723TA, TRANS PNP 100V 1A SOT23-3

Фото 1/4 FMMT723TA, TRANS PNP 100V 1A SOT23-3
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см. техническую документацию
322 ֏
Кратность заказа 10 шт.
от 100 шт.260 ֏
от 500 шт.203 ֏
от 3000 шт.154 ֏
10 шт. на сумму 3 220 ֏
Номенклатурный номер: 8003531373
Бренд: DIODES INC.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 210 mV
Configuration: Single
Continuous Collector Current: -1 A
DC Current Gain hFE Max: 300 at 10 mA, 10 V
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 200 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Pd - Power Dissipation: 625 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: FMMT72
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Voltage -100 V
Maximum DC Collector Current -1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 200 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 625 mW
Minimum DC Current Gain 300
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-23
Pin Count 3
Transistor Configuration Single
Transistor Type PNP
Case SOT23
Collector current 1A
Collector-emitter voltage 100V
Current gain 300…475
Frequency 200MHz
Kind of package reel, tape
Manufacturer DIODES INCORPORATED
Mounting SMD
Polarisation bipolar
Power dissipation 0.625W
Type of transistor PNP
Вес, г 0.113

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 767 КБ
Datasheet FMMT723TA
pdf, 401 КБ