SI2307CDS-T1-E3, 30V 3.5A 88m ё@10V,3.5A 3V@250uA P Channel SOT-23 MOSFETs ROHS
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Описание
SI2 Series TrenchFET® Power MOSFETs Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 7.7 ns |
| Forward Transconductance - Min: | 7 S |
| Id - Continuous Drain Current: | 3.5 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Part # Aliases: | SI2307CDS-T1-BE3 SI2307CDS-E3 |
| Pd - Power Dissipation: | 1.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 4.1 nC |
| Rds On - Drain-Source Resistance: | 88 mOhms |
| Rise Time: | 13 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 5.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 195 КБ
Трёхмерное изображение изделия
zip, 53 КБ
Трёхмерное изображение изделия
pdf, 74 КБ
