ZXTC2063E6TA, TRANS NPN/PNP 40V 3.5A/3A SOT23

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см. техническую документацию

530 ֏

Мин. кол-во для заказа 2 шт.

от 10 шт. — 396 ֏

от 100 шт. — 308 ֏

от 500 шт. — 278 ֏

2 шт. на сумму 1 060 ֏

Номенклатурный номер: 8003566109

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	45 V, 150 V
Collector- Emitter Voltage VCEO Max	40 V
Configuration	Dual
DC Current Gain HFE Max	300 at 10 mA, 2 V
Emitter- Base Voltage VEBO	7 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	190 MHz, 270 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	3.5 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-26-6
Packaging	Cut Tape or Reel
Pd - Power Dissipation	1700 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	ZXTC2063
Subcategory	Transistors
Transistor Polarity	NPN, PNP
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	130 V, 45 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	135 mV, 175 mV
Configuration:	Dual
DC Current Gain hFE Max:	300 at 10 mA, 2 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	190 MHz, 270 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	3.5 A, 3 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-26-6
Pd - Power Dissipation:	1.7 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXTC2063
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	0.04