SI2304DDS-T1-GE3, 30V 60m@10V,3.2A 2.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
SI2 Series TrenchFET® Power MOSFETsVishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V (ds) and are 100% tested gate resistance(R g ). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55 C to 150 C junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Технические параметры
| Continuous Drain Current (Id) @ 25В°C | 3.3A |
| Power Dissipation-Max (Ta=25В°C) | 1.1W |
| Rds On - Drain-Source Resistance | 60mО© @ 3.2A,10V |
| Transistor Polarity | N Channel |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Vgs - Gate-Source Voltage | 2.2V @ 250uA |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 3.3 |
| Maximum Drain Source Resistance (mOhm) | 60@10V |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V|4.5@10V |
| Typical Gate Charge @ 10V (nC) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 235@15V |
| Maximum Power Dissipation (mW) | 1100 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 50 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Supplier Package | SOT-23 |
| Pin Count | 3 |
| Standard Package Name | SOT-23 |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Package Width | 1.4(Max) |
| PCB changed | 3 |
| Lead Shape | Gull-wing |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Id - Continuous Drain Current: | 3.6 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2304DDS-T1-BE3 SI2304DDS-GE3 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.7 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 12 ns |
| Series: | SI2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.7 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Width | 1.4mm |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 237 КБ
Datasheet
pdf, 214 КБ
Datasheet SI2304DDS-T1-GE3
pdf, 236 КБ
