BC856B-7-F, TRANS PNP 65V 0.1A SOT23-3

Фото 1/6 BC856B-7-F, TRANS PNP 65V 0.1A SOT23-3
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см. техническую документацию
27 ֏
Кратность заказа 100 шт.
от 500 шт.22 ֏
от 1000 шт.17 ֏
от 3000 шт.15 ֏
100 шт. на сумму 2 700 ֏
Номенклатурный номер: 8003609828
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Описание Транзистор: PNP, биполярный, 65В, 0,1А, 350мВт, SOT23 Характеристики
Категория Транзистор
Тип биполярный
Вид PNP

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO -80 V
Collector- Emitter Voltage VCEO Max -65 V
Collector-Emitter Saturation Voltage -650 mV
Configuration Single
DC Collector/Base Gain Hfe Min 220 at-2 mA, -5 V
Emitter- Base Voltage VEBO -5 V
Factory Pack Quantity 3000
Gain Bandwidth Product FT 200 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current -200 mA
Maximum Operating Temperature +150 C
Minimum Operating Temperature -65 C
Mounting Style SMD/SMT
Package / Case SOT-23-3
Packaging Cut Tape or Reel
Pd - Power Dissipation 300 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series BC856B
Subcategory Transistors
Transistor Polarity PNP
Base Product Number BC856 ->
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
ECCN EAR99
Frequency - Transition 200MHz
HTSUS 8541.21.0075
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -65В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Power - Max 300mW
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-23-3
Transistor Type PNP
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Automotive No
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Base Emitter Saturation Voltage (V) 1.1 5mA 100mA
Maximum Collector Base Voltage (V) 80
Maximum Collector Cut-Off Current (nA) 15
Maximum Collector-Emitter Saturation Voltage (V) 0.3 0.5mA 10mA|0.65 5mA 100mA
Maximum Collector-Emitter Voltage (V) 65
Maximum DC Collector Current (A) 0.1
Maximum Emitter Base Voltage (V) 5
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 350
Minimum DC Current Gain 220 2mA 5V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Operating Junction Temperature (°C) -55 to 150
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Standard Package Name SOT-23
Supplier Package SOT-23
Type PNP
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 80 V
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 250 mV
Configuration: Single
DC Collector/Base Gain hFE Min: 220 at-2 mA, -5 V
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 200 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Pd - Power Dissipation: 310 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: BC856B
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Base Voltage -80 V
Maximum Collector Emitter Voltage -65 V
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 200 MHz
Maximum Power Dissipation 300 mW
Package Type SOT-23
Transistor Configuration Single
Вес, г 0.01

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