CSD17302Q5A

CSD17302Q5A
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см. техническую документацию
1 460 ֏
от 2 шт.1 240 ֏
от 10 шт.1 000 ֏
1 шт. на сумму 1 460 ֏
Номенклатурный номер: 8003654687
Бренд: Texas Instruments

Описание

Электроэлемент
MOSFET, N CH, 30V, 87A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:3W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:87A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V

Технические параметры

RoHS Compliant Yes
Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Forward Transconductance - Min: 68 S
Id - Continuous Drain Current: 100 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: VSONP-8
Pd - Power Dissipation: 3 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 5.4 nC
Rds On - Drain-Source Resistance: 9 mOhms
Series: CSD17302Q5A
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 10.6 ns
Typical Turn-On Delay Time: 5.2 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -8 V, +10 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Вес, г 0.34

Техническая документация

Datasheet CSD17302Q5A
pdf, 383 КБ