CSD17302Q5A
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см. техническую документацию
см. техническую документацию
1 460 ֏
от 2 шт. —
1 240 ֏
от 10 шт. —
1 000 ֏
1 шт.
на сумму 1 460 ֏
Описание
Электроэлемент
MOSFET, N CH, 30V, 87A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:3W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019); Current Id Max:87A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V
Технические параметры
RoHS Compliant | Yes |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Forward Transconductance - Min: | 68 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 3 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 5.4 nC |
Rds On - Drain-Source Resistance: | 9 mOhms |
Series: | CSD17302Q5A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 10.6 ns |
Typical Turn-On Delay Time: | 5.2 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -8 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Вес, г | 0.34 |
Техническая документация
Datasheet CSD17302Q5A
pdf, 383 КБ