CSD87350Q5D

CSD87350Q5D
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2 560 ֏
от 2 шт.2 070 ֏
от 5 шт.1 770 ֏
от 10 шт.1 650 ֏
1 шт. на сумму 2 560 ֏
Номенклатурный номер: 8003669107
Бренд: Texas Instruments

Описание

Электроэлемент
MOSFET, DUAL N-CH, 30V, 40A, LSON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:12W; Transistor Case Style:LSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

Технические параметры

Automotive No
Military No
Packaging Tape and Reel
Pin Count 8
Supplier Package LSON-CLIP EP
Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Dual
Development Kit: TPS53819AEVM-123
Factory Pack Quantity: 2500
Fall Time: 2.3 ns, 4.7 ns
Forward Transconductance - Min: 97 S, 157 S
Id - Continuous Drain Current: 40 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package/Case: LSON-CLIP-8
Pd - Power Dissipation: 12 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 8.4 nC, 20 nC
Rise Time: 17 ns, 10 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 2 N-Channel
Type: Synchronous Buck MOSFET Driver
Typical Turn-Off Delay Time: 13 ns, 33 ns
Typical Turn-On Delay Time: 7 ns, 8 ns
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Voltage: -5 V, +5 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV
Вес, г 2.417

Техническая документация

Datasheet
pdf, 616 КБ
Документация
pdf, 1086 КБ