BSZ097N10NS5ATMA1
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см. техническую документацию
см. техническую документацию
2 070 ֏
от 2 шт. —
1 630 ֏
от 5 шт. —
1 330 ֏
от 10 шт. —
1 220 ֏
1 шт.
на сумму 2 070 ֏
Описание
Электроэлемент
MOSFET, N-CH, 100V, 40A, TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0083ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Resistance | 13 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 69 W |
| Minimum Gate Threshold Voltage | 2.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TSDSON |
| Pin Count | 8 |
| Series | BSZ097N10NS5 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Width | 3.4mm |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet BSZ097N10NS5ATMA1
pdf, 1443 КБ
