IPP052NE7N3GXKSA1
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см. техническую документацию
см. техническую документацию
3 880 ֏
от 2 шт. —
3 300 ֏
от 5 шт. —
2 940 ֏
от 10 шт. —
2 760 ֏
1 шт.
на сумму 3 880 ֏
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 75В, 80А, 150Вт, PG-TO220-3
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 80A(Tc) |
| Drain to Source Voltage (Vdss) | 75V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 37.5V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 150W(Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| Series | OptiMOSв(ў |
| Supplier Device Package | PG-TO220-3-1 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 91ВµA |
| Base Product Number | IPP052 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package | Tube |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Case | PG-TO220-3 |
| Drain current | 80A |
| Drain-source voltage | 75V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 5.2mΩ |
| Polarisation | unipolar |
| Power dissipation | 150W |
| Type of transistor | N-MOSFET |
| Channel Type | N |
| Maximum Continuous Drain Current | 80 A |
| Number of Elements per Chip | 1 |
| Package Type | PG-TO220 |
| Pin Count | 3 |
| Вес, г | 2.008 |
Техническая документация
Datasheet IPP052NE7N3GXKSA1
pdf, 844 КБ
Datasheet IPP052NE7N3GXKSA1
pdf, 835 КБ
