MMDTA42-7-F, TRANS 2NPN 300V 0.5A SOT26

Фото 1/2 MMDTA42-7-F, TRANS 2NPN 300V 0.5A SOT26
Изображения служат только для ознакомления,
см. техническую документацию
185 ֏
Кратность заказа 10 шт.
от 100 шт.154 ֏
от 500 шт.119 ֏
от 3000 шт.110 ֏
10 шт. на сумму 1 850 ֏
Номенклатурный номер: 8003811405
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Технические параметры

Brand Diodes Incorporated
Collector- Base Voltage VCBO 300 V
Collector- Emitter Voltage VCEO Max 300 V
Configuration Dual
DC Collector/Base Gain Hfe Min 25
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 3000
Gain Bandwidth Product FT 50 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 0.5 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-26-6
Packaging Cut Tape or Reel
Pd - Power Dissipation 300 mW
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series MMDTA
Subcategory Transistors
Transistor Polarity NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 300 V
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Dual
DC Collector/Base Gain hfe Min: 25
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 50 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-26-6
Pd - Power Dissipation: 300 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMDTA
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.03

Техническая документация

Datasheet MMDTA42-7-F
pdf, 103 КБ