CSD88584Q5DC
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Описание
Электроэлемент
MOSFET, DUAL N-CH, 40V, VSON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:40V; On Resistance Rds(on):680Вµohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Powe
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Drain Source Resistance - (mOhm) | 950@10V |
| Maximum Drain Source Voltage - (V) | 40 |
| Maximum Gate Threshold Voltage - (V) | 2.3 |
| Maximum Power Dissipation - (mW) | 12000 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 22 |
| Process Technology | NexFET |
| Supplier Package | VSON-CLIP EP |
| Typical Gate Charge @ 10V - (nC) | 137 |
| Typical Gate Charge @ Vgs - (nC) | 68@4.5VI137@10V |
| Typical Input Capacitance @ Vds - (pF) | 9540@20V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 149 S |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | VSON-CLIP-22 |
| Pd - Power Dissipation: | 12 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 137 nC |
| Rds On - Drain-Source Resistance: | 680 uOhms |
| Rise Time: | 24 ns |
| Series: | CSD88584Q5DC |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 53 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.21 |
Техническая документация
Документация
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