CSD87588N
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см. техническую документацию
см. техническую документацию
3 740 ֏
от 2 шт. —
3 220 ֏
от 5 шт. —
2 870 ֏
от 10 шт. —
2 690 ֏
1 шт.
на сумму 3 740 ֏
Описание
Электроэлемент
30-V, N channel synchronous buck NexFET™ power MOSFET, 5 mm x 2.5 mm LGA, 25 A
Технические параметры
| Automotive | No |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Supplier Package | PTAB |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 6.3 ns |
| Forward Transconductance - Min: | 93 S |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | PTAB-5 |
| Pd - Power Dissipation: | 6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.8 nC |
| Rds On - Drain-Source Resistance: | 10.4 mOhms, 3.5 mOhms |
| Rise Time: | 36.7 ns |
| Series: | CSD87588N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 20.1 ns |
| Typical Turn-On Delay Time: | 12.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Вес, г | 0.32 |
Техническая документация
Документация
pdf, 1115 КБ
