CSD25483F4
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Описание
Электроэлемент
-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Технические параметры
Brand | Texas Instruments |
Configuration | Single |
Factory Pack Quantity | 250 |
Fall Time | 7 ns |
Forward Transconductance - Min | 1.4 S |
Height | 0.35 mm |
Id - Continuous Drain Current | -1.6 A |
Length | 1 mm |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | Picostar-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 500 mW(1/2 W) |
Product Category | MOSFET |
Qg - Gate Charge | 960 pC |
Rds On - Drain-Source Resistance | 1.07 Ohms |
Rise Time | 3.7 ns |
RoHS | Details |
Series | CSD25483F4 |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 17.4 ns |
Typical Turn-On Delay Time | 4.3 ns |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | -12 V |
Vgs th - Gate-Source Threshold Voltage | -950 mV |
Width | 0.64 mm |
Channel Mode | Enhancement |
Product Type | MOSFET |
Subcategory | MOSFETs |
Tradename | NexFET |
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 9000 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 1.4 S |
Id - Continuous Drain Current: | 1.6 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | PICOSTAR-3 |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 960 pC |
Rds On - Drain-Source Resistance: | 1.07 Ohms |
Rise Time: | 3.7 ns |
Series: | CSD25483F4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 17.4 ns |
Typical Turn-On Delay Time: | 4.3 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -12 V, +12 V |
Vgs th - Gate-Source Threshold Voltage: | 950 mV |
Вес, г | 0.2314 |
Техническая документация
Datasheet CSD25483F4
pdf, 1876 КБ
Документация
pdf, 795 КБ