CSD18540Q5B
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см. техническую документацию
см. техническую документацию
2 200 ֏
от 2 шт. —
1 760 ֏
от 5 шт. —
1 430 ֏
от 10 шт. —
1 310 ֏
1 шт.
на сумму 2 200 ֏
Описание
Электроэлемент
MOSFET, N CH, 60V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:195W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Технические параметры
| Brand | Texas Instruments |
| Configuration | Single |
| Factory Pack Quantity | 250 |
| Fall Time | 3 ns |
| Forward Transconductance - Min | 116 S |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 195 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 41 nC |
| Rds On - Drain-Source Resistance | 2.6 mOhms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | CSD18540Q5B |
| Technology | Si |
| Tradename | NextFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 6 ns |
| Unit Weight | 0.000847 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V |
| Вес, г | 0.02 |
Техническая документация
Datasheet CSD18540Q5BT
pdf, 462 КБ
