CSD18503Q5A
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см. техническую документацию
см. техническую документацию
2 030 ֏
от 2 шт. —
1 590 ֏
от 5 шт. —
1 290 ֏
от 10 шт. —
1 180 ֏
1 шт.
на сумму 2 030 ֏
Описание
Электроэлемент
):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18503Q5A
Технические параметры
| Brand | Texas Instruments |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 250 |
| Fall Time | 2.6 ns |
| Forward Transconductance - Min | 100 S |
| Id - Continuous Drain Current | 121 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 120 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 32 nC |
| Rds On - Drain-Source Resistance | 3.4 mOhms |
| Rise Time | 8.8 ns |
| RoHS | No |
| Series | CSD18503Q5A |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2.6 ns |
| Forward Transconductance - Min: | 100 S |
| Id - Continuous Drain Current: | 121 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 120 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 4.3 mOhms |
| Rise Time: | 8.8 ns |
| Series: | CSD18503Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Техническая документация
Документация
pdf, 374 КБ
