SI3483CDV-T1-GE3, Транзистор P-MOSFET, полевой, -30В, -7А, 2,7Вт, TSOP6
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
580 ֏
Мин. кол-во для заказа 3 шт.
от 25 шт. —
423 ֏
от 100 шт. —
334 ֏
от 500 шт. —
277 ֏
Добавить в корзину 3 шт.
на сумму 1 740 ֏
Описание
Описание Транзистор P-MOSFET, полевой, -30В, -7А, 2,7Вт, TSOP6 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 34@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | NRND |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOP |
| Supplier Package | TSOP |
| Typical Fall Time (ns) | 10|15 |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 22@10V|11.5@4.5V |
| Typical Input Capacitance @ Vds (pF) | 1000@15V |
| Typical Rise Time (ns) | 135|15 |
| Typical Turn-Off Delay Time (ns) | 25|30 |
| Typical Turn-On Delay Time (ns) | 45|10 |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 277 КБ
