CSD16327Q3
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см. техническую документацию
1 720 ֏
от 2 шт. —
1 460 ֏
1 шт.
на сумму 1 720 ֏
Описание
Электроэлемент
MOSFET, N-CH, 25V, 60A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.2V; Powe
Технические параметры
| T ;ROHS COMPLIANT | YESC ; C D C I |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6.2 nC |
| Rds On - Drain-Source Resistance: | 4.8 mOhms |
| Series: | CSD16327Q3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Vgs - Gate-Source Voltage: | -8 V, +10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.454 |
Техническая документация
Datasheet
pdf, 449 КБ
