IPD80R3K3P7ATMA1
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
MOSFET, N-CH, 800V, 1.9A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:18W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 1.9A(Tc) |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 500V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 18W(Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| Series | CoolMOSв(ў P7 |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 30ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Resistance | 3.3 O |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
| Package Type | TO-252 |
| Pin Count | 3 |
| Transistor Material | Si |
| Вес, г | 0.3331 |
Техническая документация
Datasheet
pdf, 1089 КБ
Документация
pdf, 970 КБ
