BSC037N08NS5ATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 860 ֏
от 2 шт. —
2 380 ֏
от 5 шт. —
2 070 ֏
от 10 шт. —
1 920 ֏
1 шт.
на сумму 2 860 ֏
Описание
Электроэлемент
MOSFET, N-CH, 80V, 100A, TDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0034ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation, RoHS Compliant: Yes
Технические параметры
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 100 |
| Maximum Drain Source Resistance - (mOhm) | 3.7@10V |
| Maximum Drain Source Voltage - (V) | 80 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Gate Threshold Voltage - (V) | 3.8 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | OptiMOS 5 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| Typical Gate Charge @ 10V - (nC) | 46 |
| Typical Gate Charge @ Vgs - (nC) | 46@10V |
| Typical Input Capacitance @ Vds - (pF) | 3200@40V |
| Maximum Continuous Drain Current | 131 A |
| Maximum Drain Source Resistance | 0.0037 Ω |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Threshold Voltage | 3.8V |
| Mounting Type | Surface Mount |
| Package Type | SuperSO8 5x6 |
| Series | OptiMOSTM5 |
| Transistor Material | Silicon |
| Continuous Drain Current (Id) | 100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.7mΩ@50A, 10V |
| Drain Source Voltage (Vdss) | 80V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.8V@72uA |
| Input Capacitance (Ciss@Vds) | 4.2nF@40V |
| Power Dissipation (Pd) | 2.5W;114W |
| Total Gate Charge (Qg@Vgs) | 58nC@10V |
| Type | 1PCSNChannel |
| Вес, г | 0.1533 |
Техническая документация
Datasheet
pdf, 1379 КБ
