IMBF170R1K0M1XTMA1
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см. техническую документацию
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Описание
Электроэлемент
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package | The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies.
Технические параметры
| Mounting | Surface Mount |
| Package Type | TO-263 |
| Packaging | Tape and Reel |
| Pin Count | 7+Tab |
| Rad Hardened | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 5.2 A |
| Maximum Drain Source Resistance | 1000 mΩ |
| Maximum Drain Source Voltage | 1700 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Series | IMBF1 |
| Continuous Drain Current | 5.2A |
| Drain Source Threshold Voltage | 4.5V |
| Drain Source Voltage | 1700V |
| Drain-Source On-State Resistance(15V) | 809mΩ |
| Encapsulated Type | Single tube |
| Input Capacitance | 275pF |
| Power Dissipation | 68W |
| Reverse Transfer Capacitance | 0.7pF |
| Total Gate Charge | 5nC |
| Вес, г | 1.519 |
Техническая документация
Документация
pdf, 1270 КБ
