IRFP4868PBF, IRFP4868 - 12V-300V N-CHANNEL PO
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2 470 ֏
Кратность заказа 77 шт.
77 шт.
на сумму 190 190 ֏
Альтернативные предложения1
Описание
Описание Транзистор, N-канал 300В 70А [TO-247AC]
Технические параметры
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 70A(Tc) |
Drain to Source Voltage (Vdss) | 300V |
Family | FETs-Single |
Featured Product | 300 V Power MOSFETs |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Gate Charge (Qg) @ Vgs | 270nC @ 10V |
Input Capacitance (Ciss) @ Vds | 10774pF @ 50V |
Mounting Type | Through Hole |
Online Catalog | N-Channel Standard FETs |
Package / Case | TO-247-3 |
Packaging | Tube |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
PCN Design/Specification | Alternative Leadframe and Die Attach 11/Jun/2013 |
Power - Max | 517W |
Product Training Modules | High Voltage Integrated Circuits(HVIC Gate Drivers) |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 42A, 10V |
Series | - |
Standard Package | 25 |
Supplier Device Package | TO-247AC |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Resistance | 32 mΩ |
Maximum Drain Source Voltage | 300 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 517 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TO-247AC |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 180 nC @ 10 V |
Width | 5.31mm |
Вес, кг | 5.17 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet IRFP4868PBF
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Datasheet irfp4868pbf
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