UJ4C075018K3S, SiC MOSFETs 750V/18mOhms, SICFET,G4,TO247-3

UJ4C075018K3S, SiC MOSFETs 750V/18mOhms, SICFET,G4,TO247-3
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см. техническую документацию
717 шт., срок 6-8 недель
20 600 ֏
от 25 шт.16 200 ֏
от 100 шт.13 100 ֏
от 250 шт.11 100 ֏
1 шт. на сумму 20 600 ֏
Номенклатурный номер: 8004579537
Бренд: Qorvo Inc.

Описание

Unclassified
UJ4C/SC 750V Gen 4 SiC FETs

UnitedSiC UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without the need to change gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the UnitedSiC UJ4C/SC FETs.

Технические параметры

Brand: UnitedSiC
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 30
Id - Continuous Drain Current: 81 A
Manufacturer: UnitedSiC
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package/Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 385 W
Product Category: JFET
Product Type: JFETs
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 23 mOhms
Series: UJ4C
Subcategory: Transistors
Technology: SiC
Tradename: SiC FET
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 750 V
Вес, г 6

Техническая документация

Datasheet UJ4C075018K3S
pdf, 484 КБ

Сроки доставки

Доставка в регион Ереван

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