FMMT723TA, Bipolar Transistors - BJT PNP SuperSOT

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710 ֏

от 10 шт. — 620 ֏

от 100 шт. — 396 ֏

от 500 шт. — 273 ֏

1 шт. на сумму 710 ֏

Номенклатурный номер: 8004585520

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	210 mV
Configuration:	Single
Continuous Collector Current:	-1 A
DC Current Gain hFE Max:	300 at 10 mA, 10 V
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Pd - Power Dissipation:	625 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	FMMT72
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Voltage	-100 V
Maximum DC Collector Current	-1 A
Maximum Emitter Base Voltage	5 V
Maximum Operating Frequency	200 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	625 mW
Minimum DC Current Gain	300
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Type	PNP
Case	SOT23
Collector current	1A
Collector-emitter voltage	100V
Current gain	300…475
Frequency	200MHz
Kind of package	reel, tape
Manufacturer	DIODES INCORPORATED
Mounting	SMD
Polarisation	bipolar
Power dissipation	0.625W
Type of transistor	PNP
Вес, г	0.113