CE3521M4, RF JFET Transistors 20GHz NF .70dB Ga 11.9dB -55C +125C
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2 690 ֏
от 10 шт. —
2 120 ֏
1 шт.
на сумму 2 690 ֏
Номенклатурный номер: 8004590880
Бренд: California Eastern Labs
Описание
RF & Wireless\RF Transistors\RF JFET Transistors
Low Noise FETs & ICs CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
Технические параметры
| Brand: | CEL |
| Configuration: | Single |
| Factory Pack Quantity: | 1 |
| Forward Transconductance - Min: | 47 mS |
| Gain: | 11.9 dB |
| Gate-Source Cut-off Voltage: | -750 mV |
| Id - Continuous Drain Current: | 10 mA |
| Manufacturer: | CEL |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| NF - Noise Figure: | 0.7 dB |
| Operating Frequency: | 2 GHz |
| Package/Case: | minimold-4 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 125 mW |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Subcategory: | Transistors |
| Technology: | GaAs |
| Transistor Type: | pHEMT |
| Vds - Drain-Source Breakdown Voltage: | 3 V |
| Vgs - Gate-Source Breakdown Voltage: | -3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Вес, г | 0.0045 |
