2N2102 PBFREE, Bipolar Transistors - BJT NPN Ampl/Switch

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1740 шт., срок 7-9 недель

2 760 ֏

от 10 шт. — 2 180 ֏

от 100 шт. — 1 850 ֏

от 250 шт. — 1 700 ֏

Добавить в корзину 1 шт. на сумму 2 760 ֏

Номенклатурный номер: 8004612071

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hfe Min:	40
DC Current Gain hFE Max:	120
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	60 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+200 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-39
Packaging:	Bulk
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	1.26