2DC4617R-7-F, Bipolar Transistors - BJT NPN BIPOLAR
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256 ֏
от 10 шт. —
172 ֏
от 100 шт. —
80 ֏
от 1000 шт. —
44 ֏
1 шт.
на сумму 256 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin SOT-523 T/R
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 60 V |
Collector- Emitter Voltage VCEO Max: | 50 V |
Collector-Emitter Saturation Voltage: | 400 mV |
Configuration: | Single |
Continuous Collector Current: | 0.15 A |
DC Collector/Base Gain hfe Min: | 180 |
DC Current Gain hFE Max: | 390 at 1 mA, 6 V |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 180 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 150 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-523-3 |
Pd - Power Dissipation: | 150 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | 2DC46 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Collector Base Voltage (V) | 60 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4 5mA 50mA |
Maximum Collector-Emitter Voltage (V) | 50 |
Maximum DC Collector Current (A) | 0.15 |
Maximum Emitter Base Voltage (V) | 7 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 150 |
Maximum Transition Frequency (MHz) | 180(Typ) |
Minimum DC Current Gain | 180 1mA 6V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-523 |
Type | NPN |
Вес, г | 0.01 |