2DD1664R-13, Bipolar Transistors - BJT 1000W 32Vceo

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620 ֏

от 10 шт. — 484 ֏

от 100 шт. — 269 ֏

от 1000 шт. — 162 ֏

1 шт. на сумму 620 ֏

Номенклатурный номер: 8004612904

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	32 V
Collector-Emitter Saturation Voltage:	120 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	180 at 100 mA, 3 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	2500
Gain Bandwidth Product fT:	280 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	2DD16
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.75
Type	NPN
Product Category	Bipolar Power
Configuration	Single Dual Collector
Number of Elements per Chip	1
Maximum Collector Base Voltage (V)	40
Maximum Collector-Emitter Voltage (V)	32
Maximum Emitter Base Voltage (V)	6
Maximum Collector-Emitter Saturation Voltage (V)	0.4@50mA@500mA
Maximum DC Collector Current (A)	1
Minimum DC Current Gain	180@100mA@3V
Maximum Power Dissipation (mW)	1000
Maximum Transition Frequency (MHz)	280(Typ)
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	SOT
Pin Count	4
Supplier Package	SOT-89
Military	No
Mounting	Surface Mount
Package Height	1.6(Max)
Package Length	4.6(Max)
Package Width	2.6(Max)
PCB changed	3
Tab	Tab
Lead Shape	Flat
Вес, г	0.05