BC56-16PA-7, Bipolar Transistors - BJT NPN 80V Med PWR Trans 1A Ic 2A Icm

Изображения служат только для ознакомления,
см. техническую документацию

484 ֏

от 10 шт. — 366 ֏

от 100 шт. — 190 ֏

от 1000 шт. — 123 ֏

1 шт. на сумму 484 ֏

Номенклатурный номер: 8004613223

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный транзистор NPN, 80 В, 1 А, 1.65W

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1 A
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	125 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	2 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package/Case:	U-DFN2020-3
Pd - Power Dissipation:	520 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BC56
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.01