DMMT5551S-7-F, Bipolar Transistors - BJT NPN BIPOLAR

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530 ֏

от 10 шт. — 330 ֏

от 100 шт. — 159 ֏

от 1000 шт. — 116 ֏

1 шт. на сумму 530 ֏

Номенклатурный номер: 8004613368

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Матрица биполярных (BJT) транзисторов 2 NPN (двойная) согласованная пара 160 В, 200 мА, 300 МГц, 300 мВт, поверхностный монтаж, SOT-26

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	180 V
Collector- Emitter Voltage VCEO Max:	160 V
Collector-Emitter Saturation Voltage:	200 mV
Configuration:	Dual
DC Collector/Base Gain hfe Min:	30 at 50 mA, 5 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	300 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-26-6
Pd - Power Dissipation:	300 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	DMMT5551
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Base Product Number	DMMT5551 ->
Current - Collector (Ic) (Max)	200mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
ECCN	EAR99
Frequency - Transition	300MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	SOT-23-6
Power - Max	300mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-26
Transistor Type	2 NPN (Dual) Matched Pair
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	160V
Вес, г	0.01