FF450R12KE4, IGBT Modules N-CH 1.2KV 520A
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см. техническую документацию
см. техническую документацию
166 000 ֏
от 10 шт. —
136 000 ֏
от 20 шт. —
131 000 ֏
1 шт.
на сумму 166 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.15 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 520 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | 62 mm |
| Packaging: | Tray |
| Part # Aliases: | SP000370610 FF450R12KE4HOSA1 |
| Pd - Power Dissipation: | 2400 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | Trenchstop IGBT4-E4 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 337 |
Техническая документация
Datasheet
pdf, 419 КБ
