IHW15N120R3FKSA1, IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Bod
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Описание Транзистор БТИЗ, 1200V,15A,TO247 PG-TO247-3 Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.48 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 30 A |
| Factory Pack Quantity: Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IHW15N120R3 SP000521590 |
| Pd - Power Dissipation: | 254 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | IGBT RC Soft Switching |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Base Product Number | IHW15N120 -> |
| Current - Collector (Ic) (Max) | 30A |
| Current - Collector Pulsed (Icm) | 45A |
| ECCN | EAR99 |
| Gate Charge | 165nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | Trench |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 254W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchStopВ® -> |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 700ВµJ (off) |
| Td (on/off) @ 25В°C | -/300ns |
| Test Condition | 600V, 15A, 14.6Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 15A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Вес, г | 7.978 |
Техническая документация
Datasheet
pdf, 1505 КБ
