IKW30N65EL5XKSA1, IGBT Transistors 650V IGBT Trenchstop 5

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4 270 ֏

от 25 шт. — 3 070 ֏

от 100 шт. — 2 640 ֏

от 240 шт. — 2 480 ֏

Добавить в корзину 1 шт. на сумму 4 270 ֏

Номенклатурный номер: 8004635477

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz.

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.05 V
Configuration:	Single
Continuous Collector Current at 25 C:	85 A
Factory Pack Quantity: Factory Pack Quantity:	240
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Part # Aliases:	IKW30N65EL5 SP001178080
Pd - Power Dissipation:	227 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	Trenchstop IGBT5 L5
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP
Current - Collector (Ic) (Max)	85A
Current - Collector Pulsed (Icm)	120A
Gate Charge	168nC
IGBT Type	-
Input Type	Standard
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 175В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power - Max	227W
Reverse Recovery Time (trr)	100ns
Series	TrenchStopв(ў 5
Supplier Device Package	PG-TO247-3
Switching Energy	470ВµJ(on), 1.35mJ(off)
Td (on/off) @ 25В°C	33ns/308ns
Test Condition	400V, 30A, 10 Ohm, 15V
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)	650V
Channel Type	N
Configuration	Single
Maximum Collector Emitter Voltage	650 V
Maximum Continuous Collector Current	85 A
Maximum Gate Emitter Voltage	30V
Maximum Power Dissipation	227 W
Number of Transistors	1
Package Type	PG-TO247
Pin Count	3
Вес, г	38