RSR030N06HZGTL, MOSFETs Automotive Nch 60V 3A Small Signal MOSFET. RSR030N06HZG is a MOSFET for DC-DC Converters. This is a high-reliabilit

Фото 1/2 RSR030N06HZGTL, MOSFETs Automotive Nch 60V 3A Small Signal MOSFET. RSR030N06HZG is a MOSFET for DC-DC Converters. This is a high-reliabilit
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3504 шт., срок 7-9 недель
970 ֏
от 10 шт.800 ֏
от 100 шт.530 ֏
от 500 шт.395 ֏
1 шт. на сумму 970 ֏
Альтернативные предложения1
Номенклатурный номер: 8004638658
Бренд: Rohm

Описание

Unclassified
AEC-Q101 Automotive MOSFETs
ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V DSS to 100V DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

Технические параметры

Brand: ROHM Semiconductor
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 10 ns
Forward Transconductance - Min: 2.1 S
Id - Continuous Drain Current: 3 A
Manufacturer: ROHM Semiconductor
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SC-96-3
Part # Aliases: RSR030N06HZG
Pd - Power Dissipation: 1 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 5 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 85 mOhms
Rise Time: 12 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 8 ns
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 3 A
Maximum Drain Source Voltage 60 V
Mounting Type Surface Mount
Number of Elements per Chip 1
Package Type SOT-346T
Pin Count 3
Transistor Material Si
Вес, г 0.59

Техническая документация

Datasheet
pdf, 1471 КБ

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