SSM6L14FE(TE85L,F), MOSFETs LowON Res MOSFET ID=0.8A VDSS=20V
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см. техническую документацию
см. техническую документацию
477051 шт., срок 7-9 недель
580 ֏
1 шт.
на сумму 580 ֏
Описание
Unclassified
U-MOSIII MOSFETsToshiba U-MOSIII MOSFETs are single and dual channel MOSFETs ideal for high-speed switching applications. These MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Forward Transconductance - Min: | 1.05 S, 850 mS |
| Id - Continuous Drain Current: | 80 mA, 720 mA |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package/Case: | SOT-563-6 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2 nC, 1.76 nC |
| Rds On - Drain-Source Resistance: | 240 mOhms, 300 mOhms |
| Series: | SSM6L14FE |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | U-MOSIII/U-MOSV |
| Transistor Polarity: | N-Channel, P-Channel |
| Typical Turn-Off Delay Time: | 50 ns, 38 ns |
| Typical Turn-On Delay Time: | 18 ns, 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 350 mV, 1 V |
| Base Product Number | 2SA1428 -> |
| Current - Continuous Drain (Id) @ 25В°C | 800mA (Ta), 720mA (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate, 1.5V Drive |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2nC, 1.76nC @ 4.5V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF, 110pF @ 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 150mW (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V |
| RoHS Status | RoHS Compliant |
| Supplier Device Package | ES6 |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Вес, г | 0.01 |
Техническая документация
Datasheet SSM6L14FE(TE85L,F)
pdf, 253 КБ
Datasheet SSM6L14FE(TE85L.F)
pdf, 248 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
